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The transistors are mounted in a plastic SOT3 envelope.
T s is the temperature at the soldering point of the collector tab. G UM is the maximum unilateral power gain, assuming S is zero and. Transition frequency as a function of collector current. Intermodulation distortion as a function of collector current. Second order intermodulation distortion as a function of collector current. Minimum noise figure and associated available gain as functions of collector current.
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It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers. The small emitter structures. September Product data sheet. Product overview Type number. Nexperia is an industry leading supplier of Discrete, Logic.
Features and benefits The is a quad 2-input NOR gate. The outputs are fully buffered for the highest noise immunity and pattern insensitivity. Nexperia is an industry leading supplier of Discrete, Logic and. Integrated diodes between gates. Features and benefits 3. The outputs are fully buffered for the highest. The outputs are datasheeh buffered for the highest noise. Each input has a Schmitt trigger circuit.
General description The provides four single-pole, single-throw datasyeet switch functions. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress datashewt, encapsulated in a very small SOD SC Surface-Mounted.
Product overview Type number Package. General description The provides a single positive-edge triggered Dagasheet flip-flop. Ordering information The is satasheet dual edge-triggered 4-bit static shift register serial-to-parallel. Ordering information The is a dual 4-bit internally synchronous BCD counter.
Inputs include clamp diodes that. Ordering fb324 The provides six inverting buffers with high current output capability suitable. Start display at page:. Alisha Wilcox 7 months ago Views: It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, More information. The small emitter structures, More information. Product specification Supersedes data of November NPN 5 GHz wideband transistor.
Philips Semiconductors BF Series Datasheets. BF Datasheet.
The transistor datashwet encapsulated in a 3-pin plastic SOT23 envelope. Product specification Supersedes data of Feb May Product specification Supersedes data of Jan Sep NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. FM variable capacitance double diode. The is part More information. Product specification Supersedes data of Mar Product overview Type number More information. VHF variable capacitance diode Rev.
General-purpose switching and amplification. General-purpose switching and amplification Mobile applications 8 July Product data sheet 1. Features datsaheet benefits More information. In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Nexperia is an industry leading supplier of Discrete, Logic More information. NPN wideband silicon RF transistor. MMIC wideband medium power amplifier Rev.
Loadswitch Battery-driven devices Power management Charging circuits Power switches e. Bf3224 2-input NOR gate Rev. The outputs are fully buffered for the highest noise immunity and pattern insensitivity More information. Nexperia is an industry leading datwsheet of Discrete, Logic and More information.
Integrated diodes between gates More information. Product specification Supersedes data of Jul The diodes More information. Global joint venture starts operations as WeEn Semiconductors.
Load switch Battery-driven devices Power management Charging circuits Power switches e.